Diffusivities and activities of S implanted into GaAs through an As-doped a-Si:H film

• Published in: Japanese Journal of Applied Physics Vol. 35; no. 3; pp. 1624 - 1629
• Main Authors: SAKAGUCHI, M, YOKOTA, K, SHIOMI, A, MORI, H, CHAYAHARA, A, FUJII, Y, HIRAI, K, TAKANO, H, KUMAGAI, M
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01-03-1996
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Conductivity phenomena in semiconductors and insulators; Defects and impurities in crystals; microstructure; Diffusion in solids; Diffusion of impurities; Doping and impurity implantation in iii-v and ii-vi semiconductors; Electronic transport in condensed matter; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Physics; Structure of solids and liquids; crystallography; Transport properties of condensed matter (nonelectronic); Encapsulation; Gallium arsenides; Ion implantation; Annealing; Semiconductor materials; Electrical activity; Doped materials; Amorphous state; Experimental study; Hydrogenation; Sulfur additions; Quantity ratio; Silicon; Diffusion; Carrier mobility; Carrier density; Arsenic additions
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.35.1624

Sulfur (S) ions are implanted at 500 keV into GaAs through 120 nm a-Si:H films doped with arsenic atoms at a concentration of 2×10
20
cm
-3
. The samples are annealed in Ar gas at temperatures of 700–1000°C for 15 min. The sheet carrier concentration increases with increasing implant dose and annealing temperature. The diffusivity of the S atoms decreases with increasing implant dose. Silicon (Si) atoms are also doped from the a-Si:H films into GaAs during annealing and S
+
implantation. The distribution of the Si atoms becomes slightly shallower as the implant dose increases. The carrier concentrations, however, are left unchanged by Si doping.