Contact resistance of dibenzotetrathiafulvalene-based organic transistors with metal and organic electrodes

• Published in: Applied physics letters Vol. 92; no. 2; pp. 023305 - 023305-3
• Main Authors: Shibata, Koji, Ishikawa, Ken, Takezoe, Hideo, Wada, Hiroshi, Mori, Takehiko
• Format: Journal Article
• Language: English
• Published: American Institute of Physics 14-01-2008
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2834374

Thin-film transistors of dibenzotetrathiafulvalene (DBTTF) are investigated by changing the source and drain (S/D) electrode materials. Not only the mobility but also the contact resistance, estimated from the transfer line method, changes depending on the metal work functions. Nonetheless, S/D electrodes made of a metallic organic charge-transfer salt, (tetrathiafulvalene) (tetracyanoquinodimethane) [(TTF)(TCNQ)] exhibits much smaller contact resistance, which is attributed to small potential shift on the organic/organic interface compared with the organic/metal interface. A thin film of (DBTTF)(TCNQ) works as an active layer of air-stable
n
-channel organic transistors when (TTF)(TCNQ) is used as the S/D electrodes.