Optical properties of quasi-type-II structure in GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires

• Published in: Applied physics letters Vol. 113; no. 23
• Main Authors: Li, Haolin, Tang, Jilong, Kang, Yubin, Zhao, Haixia, Fang, Dan, Fang, Xuan, Chen, Rui, Wei, Zhipeng
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 03-12-2018
• Subjects: Applied physics; Conduction bands; Nanowires; Optical properties; Optoelectronic devices; Photoluminescence; Quantum confinement; Quantum wells; Temperature dependence; Thermal energy
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.5053844

The GaAsSb-based quantum well plays a very important role in optoelectronic devices due to its excellent wavelength tunability. When the dimension reduces, the quantum confinement effect will take place and the quantum well in nanowires will show many interesting characteristics. GaAsSb-based quantum-well nanowires are of contemporary interest. However, the properties of the quasi-type-II structure in a single quantum well nanowire have been rarely investigated. Here, we grow GaAs/GaAs0.92Sb0.08/GaAs coaxial single quantum-well nanowires and discussed their power-dependent and temperature-dependent photoluminescence. We find that due to the small band offset of conduction bands, both type-I like and type-II like emission exist in our nanowires. When electrons obtain enough thermal energy through collisions or surrounding environment, they will overcome the barrier and diffuse to the GaAs conduction band, which contributes to the type-II like recombination. These results show the optical property of the quasi-type-II quantum well in nanowires, which can pave the way toward future nanoscale quantum well devices.