Influence of crystal orientation and body doping on trigate transistor performance

• Published in: Solid-state electronics Vol. 50; no. 1; pp. 38 - 43
• Main Authors: Landgraf, E., Rösner, W., Städele, M., Dreeskornfeld, L., Hartwich, J., Hofmann, F., Kretz, J., Lutz, T., Luyken, R.J., Schulz, T., Specht, M., Risch, L.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 2006; Elsevier Science
• Subjects: Applied sciences; Double gate; Electronics; Exact sciences and technology; FinFET; Mobility; MOSFET; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Trigate; 85.30.De; MOSFET; 85.30.Tv; Double gate; FinFET; Mobility; Trigate; Performance evaluation; Crystal orientation; Doping; Short channel; n channel; Dual gate transistor; Self aligned technology; Long channel; p channel; Transistor channel; 85.30.Tv Trigate
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2005.10.041

This work characterizes long channel trigate transistors with respect to the systematic influence of crystal orientation and body doping on performance issues like mobility and
V
th adjustment. A fin orientation of 〈1
0
0〉 is found favourable for n-channel, 〈1
1
0〉 for p-channel transistors. Experiment shows that body doping is suitable to taylor
V
th, but low doping levels are preferable to reduce
V
th variations. The applicability of these long channel results to short-channel transistors down to 20
nm gate length is demonstrated and good performance is obtained.