The gap state density of micro/nano-crystalline silicon active layer on flexible substrate

• Published in: Thin solid films Vol. 518; no. 6; pp. S246 - S249
• Main Authors: Lee, M.H., Chang, S.T., Lee, C.-C., Huang, J.-J., Hu, G.-R., Huang, Y.-S.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 2010; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Deep state; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Flexible; Mechanical strain; Physics; Redistribution; Surface and interface electron states; Surface states, band structure, electron density of states; Flexible; Redistribution; Deep state; Mechanical strain; Density of states; Active layer; Gaussian distribution; Gallium phosphide; Electronic density of states; Normal distribution; Amorphous hydrogenated material; Bending; Silicon; Reliability
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.10.099

The gap state density of micro/nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain, the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS of a µc-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics.