Simulation for capacitance correction from Nyquist plot of complex impedance–voltage characteristics

• Published in: Solid-state electronics Vol. 52; no. 6; pp. 990 - 996
• Main Authors: Kavasoglu, A. Sertap, Kavasoglu, Nese, Oktik, Sener
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01-06-2008; Elsevier Science
• Subjects: Applied sciences; Built-in potential; Capacitance correction; Complex impedance; Device simulation; Electronics; Exact sciences and technology; Nyquist plot; Series resistance subtraction; Testing, measurement, noise and reliability; Complex impedance; Capacitance correction; Nyquist plot; Series resistance subtraction; Built-in potential; Device simulation; Semiconductor device; Computer simulation; Capacitance; Series resistance; Voltage capacity curve; Electrical characteristic
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2008.02.004

The impression of series resistance on unipolar semiconductor device’s capacitance–voltage spectrum is discussed by conventional impedance and admittance analysis, and it is shown that series resistance may cause large errors in capacitance–voltage data. It is shown that the existence of such errors can be deduced from suitable complex impedance measurement obtained during the capacitance–voltage measurement process and this information can be used to correct the distorted capacitance values. A theoretical analysis and computer simulation are presented in order to illustrate the nature of the problem and the technique by which accurate depletion region capacitance can be obtained.