High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier

• Published in: Applied physics letters Vol. 115; no. 7
• Main Authors: Zhang, Yachao, Guo, Rui, Xu, Shengrui, Zhang, Jincheng, Zhao, Shenglei, Wang, Haiyong, Hu, Qiang, Zhang, Chunfu, Hao, Yue
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 12-08-2019
• Subjects: Applied physics; Broadband; Gallium nitrides; Heterostructures; High electron mobility transistors; Indium gallium nitrides; Linearity; Semiconductor devices; Superlattices; Transistors
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.5102080

A heterostructure with a GaN/InGaN composite channel and superlattice back barrier is proposed, and high-performance high electron mobility transistors (HEMTs) are achieved on it. The carriers in the GaN/InGaN composite channel are well confined in the “U-pattern” potential well, which simultaneously possess high mobility, high density, and superior confinement. As a result, the output current density and linearity of the HEMTs are enhanced. Moreover, the GaN/InGaN superlattice back barrier effectively suppresses the buffer leakage, resulting in the significant improvement in the breakdown performance of the devices. The results in this work demonstrate the great promise of the devices with the GaN/InGaN composite channel and superlattice back barrier for next generation high power and wideband electronic applications.