Vertical MgZnO Schottky ultraviolet photodetector with Al doped MgZnO transparent electrode

• Published in: Thin solid films Vol. 548; pp. 456 - 459
• Main Authors: Li, Chaoqun, Zhang, Zhenzhong, Chen, Hongyu, Xie, Xiuhua, Shen, Dezhen
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 02-12-2013; Elsevier
• Subjects: Al doped MgZnO; Applied sciences; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Electronics; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MgZnO; Optoelectronic devices; Physics; Schottky; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Ultraviolet photodetector; Vertical; Schottky; Vertical; Al doped MgZnO; Ultraviolet photodetector; MgZnO; Aluminium addition; Photodetector; Thin film; Breakdown voltage; Sapphire; Physical vapor deposition; Leakage current; Cathodic sputtering; Sputter deposition
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2013.09.083

In this paper, we report a vertical Schottky ultraviolet photodetector based on the MgZnO:Al transparent electrode. The vertical MgZnO:Al/MgZnO/Au photodetector was fabricated on the sapphire substrate, which shows a good Schottky contacting character. The transparent and conducting MgZnO:Al thin film was developed by magnetron sputtering and annealed to fit the request of our detection. The device is structured vertically in an order of sapphire/MgZnO:Al/MgZnO/Au. The device shows a good Schottky contacting character. The maximum responsivities of the photodetector are 0.0266mA/W at 0V bias and 13.31mA/W under 10V backward bias, respectively. The peak response wavelength is located at 340nm and cut-off is at the wavelength of 355nm. The turn-on voltage is 2.0V and the breakdown voltage is 40V. The leakage current is less than 70pA at a reverse bias of 15V.
•We design a vertical structure of MgZnO UV photodetector.•We fabricated an Al doped MgZnO film as transparent electrode for detector.•Our vertical structure detector achieves Schottky contact.•The applicability of the electrode and the vertical structured device is demonstrated.