Strain-balanced GaAsP/InGaAs quantum well solar cells

Strain-balanced GaAsP/InGaAs quantum well solar cells

A strain-balance multiquantum well (MQW) approach to enhance the GaAs solar cell efficiency is reported. Using a p-i-n diode structure, the strain-balanced GaAsP/InGaAs MQW is grown on a GaAs substrate and equals a good GaAs cell in terms of power conversion efficiency. The cell design is presented...

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Bibliographic Details
Published in:Applied physics letters Vol. 75; no. 26; pp. 4195 - 4197
Main Authors: Ekins-Daukes, N. J., Barnham, K. W. J., Connolly, J. P., Roberts, J. S., Clark, J. C., Hill, G., Mazzer, M.
Format: Journal Article
Language:English
Published: American Institute of Physics 27-12-1999
Subjects:
Condensed Matter
Materials Science
Physics
Online Access:Get full text
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Summary:A strain-balance multiquantum well (MQW) approach to enhance the GaAs solar cell efficiency is reported. Using a p-i-n diode structure, the strain-balanced GaAsP/InGaAs MQW is grown on a GaAs substrate and equals a good GaAs cell in terms of power conversion efficiency. The cell design is presented together with measurements of the forward bias dark current density, quantum efficiency, and 3000 K light-IV response. Cell efficiencies under standard air mass (AM) 1.5 and AM 0 illumination are projected from experimental data and the suitability of this cell for enhancing GaInP/GaAs tandem cell efficiencies is discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.125580