Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 47; no. 7; pp. 993 - 996
• Main Authors: Maleev, N. A., Kuz’menkov, A. G., Kulagina, M. M., Zadiranov, Yu. M., Vasil’ev, A. P., Blokhin, S. A., Shulenkov, A. S., Troshkov, S. I., Gladyshev, A. G., Nadtochiy, A. M., Pavlov, M. M., Bobrov, M. A., Nazaruk, D. E., Ustinov, V. M.
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01-07-2013; Springer
• Subjects: Lasers; Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Physics of Semiconductor Devices; Semiconductors; Pump Current; Distribute Bragg Reflector; Continuous Wave Mode; Vertical Cavity Surface; Vertical Cavity Surface Emit Laser
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782613070166

Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector (DBR) for the 850 nm spectral region are fabricated. The suggested design provides stable single-mode generation in the entire range of working currents, limited by overheating of the active region. Devices with intracavity contacts and a comparatively large current-aperture diameter (5–6 μm) exhibit single-mode lasing at a wavelength of 840–845 nm in the continuous-wave mode at room temperature with threshold currents of 1.2–1.3 mA, a differential efficiency of 0.5–0.55 mW mA
−1
, and anoutput power of up to 2 mW.