Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes

• Published in: Thin solid films Vol. 520; no. 14; pp. 4820 - 4822
• Main Authors: Mantovan, R., Vangelista, S., Kutrzeba-Kotowska, B., Cocco, S., Lamperti, A., Tallarida, G., Mameli, D., Fanciulli, M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-05-2012; Elsevier
• Subjects: Atomic layer deposition; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Magnetic properties and materials; Magnetic properties of monolayers and thin films; Magnetic properties of surface, thin films and multilayers; Magnetic tunnel junctions; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Thin films; Tunnel magnetoresistance; Vapor phase epitaxy; growth from vapor phase; Thin films; Magnetic tunnel junctions; Atomic layer deposition; Tunnel magnetoresistance; Chemical vapor deposition; Atomic layer method; Oxide layer; Magnesium oxide; Tunnel effect; Ferromagnetic materials; Iron; Crystal growth from vapors; CVD; Tunnel junction; Magnetoresistance
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2011.08.037

Magnetic tunnel junctions, i.e. the combination of two ferromagnetic electrodes separated by an ultrathin tunnel oxide barrier, are core elements in a large variety of spin-based devices. We report on the use of combined chemical vapor and atomic layer deposition processes for the synthesis of magnetic tunnel junctions with no vacuum break. Structural, chemical and morphological characterizations of selected ferromagnetic and oxide layers are reported, together with the evidence of tunnel magnetoresistance effect in patterned Fe/MgO/Co junctions.