Reconversion of the CdHgTe conductivity type after plasma etching process at low temperature

• Published in: Applied physics letters Vol. 116; no. 8
• Main Authors: Gorshkov, D. V., Sidorov, G. Yu, Varavin, V. S., Sabinina, I. V., Yakushev, M. V.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 24-02-2020
• Subjects: Applied physics; Argon; Hall effect; Low temperature; Microscopes; Plasma etching; Room temperature
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.5136265

We report on the relaxation of Hall coefficient RH (77 K) depending on the magnetic field in p-Cdx
Hg
1
−
xT (x = 0.222) to the initial values, which were before the plasma etching process in argon and methane plasma. The time required to change the conductivity type from the n-type, which was created on the sample surface at a depth of around a micrometer, to the p-type is less than 165 min. We show that the electron concentration in the thin layer near the sample surface decreases to an insignificant value with the increasing storage time at room temperature.