Thermally activated conduction mechanisms in Silicon Nitride MIS structures

• Published in: Thin solid films Vol. 518; no. 9; pp. 2357 - 2360
• Main Authors: Kanapitsas, A., Tsonos, C., Triantis, D., Stavrakas, I., Anastasiadis, C., Photopoulos, P., Pissis, P., Em. Vamvakas, V.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 26-02-2010; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Conduction mechanisms; DC conductivity; Diffusion; interface formation; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Metal-insulator-semiconductor structures (including semiconductor-to-insulator); Physics; Silicon nitride; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); TSDC; DC conductivity; Conduction mechanisms; TSDC; Silicon nitride; Interfaces; MIS structures; Temperature dependence; Electrical conductivity; Thermostimulated conduction; Electrical conductivity measurement; Silicon; Diffusion
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.10.112

This publication reports on thermally activated currents in n-silicon/Si
3N
4/Al structures. The samples prepared were examined by means of I–V, C–V, ac conductivity and thermally stimulated depolarisation current (TSDC) measurements. The results indicate that DC conductivity is controlled by charge diffusion. Both conductivity and TSDC measurements indicate that mobile carriers which are trapped at the Si/nitride interface for low temperatures are de-trapped when temperature approaches room temperature resulting in a fast increase of DC conductivity. Additionally it is found that at high temperatures the ac conductivity follows a power law with respect to frequency where the exponent is close to two. Implications of this type of variation are also discussed. The results were used in order to explain the contribution of defects to the conduction mechanisms and the device behaviour.