A new model for the thermal oxidation kinetics of silicon

Saved in:

Bibliographic Details
Published in:	Journal of electronic materials Vol. 17; no. 4; pp. 263 - 272
Main Authors:	NICOLLIAN, E. H, REISMAN, A
Format:	Journal Article
Language:	English
Published:	New York, NY Institute of Electrical and Electronics Engineers 01-07-1988
Subjects:	Chemistry Exact sciences and technology Inorganic chemistry and origins of life Kinetics and mechanism of reactions Kinetic model Non metal Compounds Gas solid reaction Kinetic equation Reaction mechanism Activation parameter Oxidation Silicon Thermal reaction Silicon IV Oxides Rate constant Thermodynamic properties
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
ISSN:	0361-5235 1543-186X
DOI:	10.1007/bf02652105