The Effect of a Vacuum Environment on the Electrical Properties of a MoS2 Back-Gate Field Effect Transistor

• Published in: Crystals (Basel) Vol. 13; no. 10; p. 1501
• Main Authors: Li, Jichao, Peng, Songang, Jin, Zhi, Tian, He, Wang, Ting, Peng, Xueyang
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 01-10-2023
• Subjects: Adsorbents; Carrier mobility; Carrier transport; Electrical properties; Electrons; Field effect transistors; field-effect transistor; Molybdenum; Molybdenum disulfide; MoS2; Oxidation; Semiconductor devices; Silicon; subthreshold swing; Transistors; Transport properties; vacuum
• ISSN: 2073-4352; 2073-4352
• DOI: 10.3390/cryst13101501

Adsorption of gas molecules on the surface of two-dimensional (2D) molybdenum disulfide (MoS2) can significantly affect its carrier transport properties. In this letter, we investigated the effect of a vacuum environment on the electrical properties of a back-gate MoS2 FET. Benefiting from the reduced scattering centers caused by the adsorbed oxygen and water molecules in a vacuum, the current Ion/Ioff ratio of back-gate MoS2 field effect transistor increased from 1.4 × 106 to 1.8 × 107. In addition, the values of field effect carrier mobility were increased by more than four times, from 1 cm2/Vs to 4.2 cm2/Vs. Furthermore, the values of subthreshold swing could be decreased by 30% compared with the sample in ambient air. We demonstrate that the vacuum process can effectively remove absorbates and improve device performances.