Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal–Oxide–Semiconductor Transistors

Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal–Oxide–Semiconductor Transistors

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 47; no. 8R; p. 6272
Main Authors: Davidović, Vojkan, Stojadinović, Ninoslav, Danković, Danijel, Golubović, Snežana, Manić, Ivica, Djorić-Veljković, Snežana, Dimitrijev, Sima
Format: Journal Article
Language:English
Published: 01-08-2008
Online Access:Get full text
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Description
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.47.6272