Thickness dependent aggregation of Fe–silicide islands on Si substrate

Iron–silicides were grown on Si by reactive deposition epitaxy method and by conventional solid phase reaction. The morphology of silicides was investigated by optical microscopy, scanning electron microscopy and by atomic force microscopy. The phases formed were identified by X-ray diffraction. The...

Full description

Saved in:
Bibliographic Details
Published in:Thin solid films Vol. 459; no. 1; pp. 48 - 52
Main Authors: Molnár, G, Dózsa, L, Pető, G, Vértesy, Z, Koós, A.A, Horváth, Z.E, Zsoldos, E
Format: Journal Article Conference Proceeding
Language:English
Published: Lausanne Elsevier B.V 01-07-2004
Elsevier Science
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Iron–silicides were grown on Si by reactive deposition epitaxy method and by conventional solid phase reaction. The morphology of silicides was investigated by optical microscopy, scanning electron microscopy and by atomic force microscopy. The phases formed were identified by X-ray diffraction. The thickness of the evaporated Fe films ranged from 1.5 to 30 nm and the in situ heat treatments were carried out between 500 and 800 °C. Self-assembled, island like, oriented β-FeSi 2 and α-FeSi 2 were found to grow on Si(100) substrates under 15 nm initial Fe thickness. The size of the islands was between 20 and 500 nm, and their shape varied from circular to faceted triangular and quadratic depending on the Fe thickness and on the annealing. Above 20 nm evaporated Fe thickness, the samples show islands of β-FeSi 2 phase grown into the FeSi matrix indicating a nucleation controlled type transition of the FeSi to β-FeSi 2 phase.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2003.12.135