Thickness dependent aggregation of Fe–silicide islands on Si substrate
Iron–silicides were grown on Si by reactive deposition epitaxy method and by conventional solid phase reaction. The morphology of silicides was investigated by optical microscopy, scanning electron microscopy and by atomic force microscopy. The phases formed were identified by X-ray diffraction. The...
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Published in: | Thin solid films Vol. 459; no. 1; pp. 48 - 52 |
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Main Authors: | , , , , , , |
Format: | Journal Article Conference Proceeding |
Language: | English |
Published: |
Lausanne
Elsevier B.V
01-07-2004
Elsevier Science |
Subjects: | |
Online Access: | Get full text |
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Summary: | Iron–silicides were grown on Si by reactive deposition epitaxy method and by conventional solid phase reaction. The morphology of silicides was investigated by optical microscopy, scanning electron microscopy and by atomic force microscopy. The phases formed were identified by X-ray diffraction. The thickness of the evaporated Fe films ranged from 1.5 to 30 nm and the in situ heat treatments were carried out between 500 and 800 °C. Self-assembled, island like, oriented β-FeSi
2 and α-FeSi
2 were found to grow on Si(100) substrates under 15 nm initial Fe thickness. The size of the islands was between 20 and 500 nm, and their shape varied from circular to faceted triangular and quadratic depending on the Fe thickness and on the annealing. Above 20 nm evaporated Fe thickness, the samples show islands of β-FeSi
2 phase grown into the FeSi matrix indicating a nucleation controlled type transition of the FeSi to β-FeSi
2 phase. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2003.12.135 |