Modeling projection printing of positive photoresists

• Published in: IEEE transactions on electron devices Vol. 22; no. 7; pp. 456 - 464
• Main Authors: Dill, F.H., Neureuther, A.R., Tuttle, J.A., Walker, E.J.
• Format: Journal Article
• Language: English
• Published: IEEE 01-07-1975
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1975.18161

The accompanying papers "Optical Lithography" and "Characterization of Positive Photoresist" introduce the concepts of modeling using destruction of the photoactive inhibitor compound to describe exposure and a surface-limited removal rate to describe development together with the optical exposure parameters A, B, and C and a rate relationship, R(M), which characterize the photoresist for modeling purposes. This paper applies the model to, the projection exposure environment: exposure and development of photoresist are treated with a simulation model that allows computation of image surface profiles for positive photoresist exposed with a diffraction limited real image.