Time domain analysis of traps generated random telegraph signal in (SWCNT) based sensors

• Published in: Sensors and actuators. A. Physical. Vol. 252; pp. 185 - 189
• Main Authors: Troudi, M., Bergaoui, Y., Bondavalli, P., Sghaier, N.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01-12-2016; Elsevier BV
• Subjects: Absorption cross sections; Band gap; Gas detectors; Interface CNT/SiO2; Nanotubes; RTS noise; Sensors; Silicon dioxide; Single wall carbon nanotubes; Time domain analysis; Traps; Traps; RTS noise; Sensors; Interface CNT/SiO2; Single wall carbon nanotubes
• ISSN: 0924-4247; 1873-3069
• DOI: 10.1016/j.sna.2016.10.031

•Single charge detection process confirmed by RTS technique.•High sensitivity of the studied CNT detector.•Interface traps impact.•Energy and spatial traps localisation.
In this paper, we analyzed single wall carbon nanotubes (SWCNT) gas detectors. The relationship between excitation signal (voltage) and random-telegraph-signal (RTS) was highlighted. We demonstrated that induced RTS observed on SWCNTs based detectors is mainly due to the interaction between single generated charges that tunnel from trap to trap and SWCNT/SiO2 interface. Based on RTS analysis for various temperatures and gate bias, we determined the characteristics of these single generated traps: the energy position (ET∼0.38eV) within the silicon bandgap, capture cross section (σ∼10−17cm2) and the position within the CNT/SiO2 interface (xTrap≈0.3nm). These informations will strongly help us into optimizing the fabrication process and to deeply understand some unknown physics effect of these extremely promising devices.