Design Strategies for InGaN-Based Green Lasers

• Published in: IEEE journal of quantum electronics Vol. 46; no. 2; pp. 238 - 245
• Main Authors: Venkatachalam, A., Klein, B., Jae-Hyun Ryou, Shyh-Chiang Shen, Dupuis, R.D., Yoder, P.D.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-02-2010; Institute of Electrical and Electronics Engineers
• Subjects: Buffer layers; Capacitive sensors; Composite materials; Epitaxial layers; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Gallium nitride; InGaN; Lasers; Optical buffering; Optical design; optical gain; Optical polarization; Optical sensors; Optics; Physics; Piezoelectric polarization; polarization charges; quantum confined Stark effect; quantum wells; Semiconductor lasers; laser diodes; strain; transition energy; strain; Gallium Nitrides; polarization charges; Ternary compounds; Quantum wells; Quantum confined Stark effect; Optical gain; transition energy; Semiconductor lasers; Green lasers; Strains; Indium Nitrides; Visible radiation; Quantum well lasers; InGaN; Spectral density
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2009.2029348

A design parameter subspace is explored to suggest epitaxial layer structures which maximize gain spectral density at a target wavelength for green In ¿ Ga 1-¿ N-based single quantum well active regions. The dependence of the fundamental optical transition energy on the thickness and composition of barriers and wells is discussed, and the sensitivity of gain spectral density to design parameters, including the choice of buffer layer material, is investigated.