Vacancy-type defects in Be-implanted InP

• Published in: Japanese Journal of Applied Physics Vol. 33; no. 1A; pp. 33 - 36
• Main Authors: LONG WEI, TANIGAWA, S, UEDONO, A, WADA, K, NAKANISHI, H
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 1994
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in iii-v and ii-vi semiconductors; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other interactions of matter with particles and radiation; Physics; Point defects (vacancies, interstitials, color centers, etc.) and defect clusters; Positron annihilation; Structure of solids and liquids; crystallography; Ion implantation; Inorganic compounds; Vacancies; Semiconductor materials; Crystal defect density; Positron probes; Binary compounds; Beryllium additions; Radiation doses; Experimental study; Annihilation; Indium phosphides; Depth profiles
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.33.33

Vacancy-type defects generated by the ion implantation of 60 keV Be
+
ions in InP have been investigated by a slow positron beam technique. The vacancy-type defects increase with the implantation dose. The calculated total capture of positron was found to be linear to the implantation dose. The depth profiles of vacancy-type defects were found to be nearly the same as the stopping profiles of implanted ions.