Characterization of sharp phosphorus dopant features in silicon by secondary ion mass spectrometry

• Published in: Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 9; no. 4; pp. 2402 - 2404
• Main Authors: Vriezema, C. J., Zalm, P. C., Maes, J. W. F. M., Roksnoer, P. J.
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 01-07-1991
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in iii-v and ii-vi semiconductors; Exact sciences and technology; Physics; Structure of solids and liquids; crystallography; DEPTH PROFILES; OXYGEN IONS; SILICON; ION BEAMS; PHOSPHORUS ADDITIONS; VPE; SIMS; DOPED MATERIALS; Si:P; Characterization; Semiconductor materials; Phosphorus; Secondary ion mass spectrometry; Silicon; Experimental study; Doping profile; Thin film
• ISSN: 0734-2101; 1520-8559
• DOI: 10.1116/1.577286

The in‐depth distribution of a sharp P dopant feature in Si grown by vapor phase epitaxy has been determined by secondary ion mass spectrometry under various bombardment conditions. It is shown that with a low energy primary 0+
2 beam supplemented by oxygen gas flooding of the sample surface both sub‐ppm detection limits and good depth resolution can be obtained simultaneously. This combination is not possible by using either primary Cs+ bombardment, giving only good detection limits, or low energy oxygen bombardment, resulting in a good depth resolution but unfavorable detection limits.