Effect of fluorine (an anionic dopant) on transparent conducting properties of Sb (a cationic) doped ZnO thin films deposited using a simplified spray technique

• Published in: Materials research bulletin Vol. 83; pp. 442 - 452
• Main Authors: Ravichandran, K., Dineshbabu, N., Arun, T., Ravidhas, C., Valanarasu, S.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-11-2016
• Subjects: A. Semiconductors; A. Thin films; B. Optical properties; C. Photoelectron spectroscopy; D. Electrical properties; B. Optical properties; A. Thin films; C. Photoelectron spectroscopy; A. Semiconductors; D. Electrical properties
• ISSN: 0025-5408; 1873-4227
• DOI: 10.1016/j.materresbull.2016.06.033

XPS survey spectrum of Sb (2 at.%) +F(10 at.%) co-doped ZnO thin films.
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⿢First report on Sb+F doped ZnO thin films prepared by a chemical method.⿢Survey on ⿿a cation+F⿿ doped ZnO film is included to support the discussion.⿢Remarkably reduced resistivity is achieved by a low-cost simple chemical method.⿢PL, SEM, EDAX, XPS studies support discussion on TCO properties.
By adding fluorine, an anionic co-dopant with antimony, a cationic dopant, Sb+F doped ZnO films are prepared using a simplified spray technique and the effect of fluorine concentration (0, 5, 10 and 15 at.%) on electrical, optical, structural and surface morphological properties are studied. The results show that the resistivity of ZnO:Sb:F film decreases gradually with the increase in F doping level, reaches a minimum value of 7.27ÿ10⿿3Ωcm at 10 at.% and starts increasing thereafter. The possible mechanisms for this variation in resistivity are addressed. The optical transmittance slightly improves due to F doping. The surface morphological studies reveal that the shape and size of the grains are affected remarkably by Sb doping but not affected appreciably by the additional F doping. The XRD, XPS and EDAX analyses confirm the formation of hexagonal wurtzite ZnO structure and the presence of the expected elements in the final product.