Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs

• Published in: IEEE transactions on nuclear science Vol. 58; no. 6; pp. 2563 - 2569
• Main Authors: El-Mamouni, F., Zhang, E. X., Pate, N. D., Hooten, N., Schrimpf, R. D., Reed, R. A., Galloway, K. F., McMorrow, D., Warner, J., Simoen, E., Claeys, C., Griffoni, A., Linten, D., Vizkelethy, G.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-12-2011; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bulk FinFET; Charge; charge collection; Collection; Diffusion; Drains; Drift; FinFETs; ion-beam-induced-charge-collection (IBICC); Lasers; Logic gates; Signatures; Single event transient; single event transient (SET); through-wafer two-photon absorption (TPA); Transient analysis
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2011.2171994

Through-wafer two-photon absorption laser experiments were performed on bulk FinFETs. Transients show distinct signatures for charge collection from drift and diffusion, demonstrating the contribution of charge generated in the substrate to the charge collection process. This result was validated through heavy ion testing on more advanced bulk FinFETs with fin widths as narrow as 5 nm. The drain region dominates the charge collection, with as much as 45 fC of charge collected in the drain region.