Meandering of overgrown v-shaped defects in epitaxial GaN layers

• Published in: Applied physics letters Vol. 105; no. 1
• Main Authors: Weidlich, P. H., Schnedler, M., Portz, V., Eisele, H., Dunin-Borkowski, R. E., Ebert, Ph
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 07-07-2014
• Subjects: Applied physics; Defects; Epitaxial layers; Lateral displacement; Threading dislocations
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4887372

The meandering of v-shaped defects in GaN(0001) epitaxial layers is investigated by cross-sectional scanning tunneling microscopy. The spatial position of v-shaped defects is mapped on (101¯0) cleavage planes using a dopant modulation, which traces the overgrown growth front. Strong lateral displacements of the apex of the v-shaped defects are observed. The lateral displacements are suggested to be induced by the meandering of threading dislocations present in the v-shaped defects. The meandering of the dislocation is attributed to interactions with inhomogeneous strain fields.