Monolithic array of optoelectronic broad-band switches

• Published in: IEEE journal of solid-state circuits Vol. 19; no. 2; pp. 219 - 223
• Main Authors: MacDonald, R.I., Lam, D.K.W., Hum, R.H., Noad, J.P.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-04-1984; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit properties; Electric, optical and optoelectronic circuits; Electromagnetic coupling; Electronics; Exact sciences and technology; Frequency; Gallium arsenide; Integrated optics; Intensity modulation; Miscellaneous; Optical and optoelectronic circuits; Optical arrays; Optical crosstalk; Optical modulation; Optical switches; Photoconductivity; Gallium Arsenides; Photoconducting device; Network; Optoelectronic device; Photoelectric cell; Microwave; Selector switch; Monolithic integrated circuit; Switching; Matrix circuit
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.1984.1052120

The response of monolithic arrays of GaAs photoconductors to optical intensity modulation signals and their feasibility of operating as crosspoint arrays in integrated broadband switch matrices are investigated. It is found that individual photoconductors can switch signals at frequencies of up to 1.3 GHz with isolation better than 70 dB and switching time less than 10 ns. In a 2/spl times/2 monolithic array, 65-dB switch isolation and 80-dB crosstalk isolation between channels are achieved in the frequency range 0-130 MHz. The responsivity is essentially uniform within this frequency range and has a value of 0.84 A/W at 820 nm. At higher frequencies electromagnetic coupling between output lines limits the performance with the layout used. This monolithic array thus demonstrates compact broadband matrix switching of signals in the frequency range up to 100 MHz using the optoelectronic switching principle.