Direct writing of GaAs monolayers by laser-assisted atomic layer epitaxy
Direct writing of GaAs epitaxial monolayers has been achieved by laser-assisted atomic layer epitaxy (LALE) technique on GaAs substrates. Sequential exposures of the substrate to trimethylgallium (TMG) and arsine (AsH3) were separated by periods of hydrogen purging to prevent mixing. Laser beam scan...
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| Published in: | Applied physics letters Vol. 52; no. 14; pp. 1144 - 1146 |
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| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
04-04-1988
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| Online Access: | Get full text |
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