Direct writing of GaAs monolayers by laser-assisted atomic layer epitaxy

• Published in: Applied physics letters Vol. 52; no. 14; pp. 1144 - 1146
• Main Authors: Karam, N. H., Liu, H., Yoshida, I., Bedair, S. M.
• Format: Journal Article
• Language: English
• Published: 04-04-1988
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.99186

Direct writing of GaAs epitaxial monolayers has been achieved by laser-assisted atomic layer epitaxy (LALE) technique on GaAs substrates. Sequential exposures of the substrate to trimethylgallium (TMG) and arsine (AsH3) were separated by periods of hydrogen purging to prevent mixing. Laser beam scanning of the samples took place either during the flow of TMG or AsH3. The selectively grown films at the one monolayer per cycle condition have a mirrorlike surface and a flat top thickness profile. LALE has been realized at temperatures as low as 300 °C and over a wide range of TMG flux and laser power densities. Photoluminescence results of the deposited films show that their quality are comparable to those achieved by conventional ALE.