Device design for high‐efficiency monolithic two‐terminal, four‐terminal mechanically stacked, and four‐terminal optically coupled perovskite‐silicon tandem solar cells

• Published in: International journal of energy research Vol. 45; no. 7; pp. 10538 - 10545
• Main Authors: Kanoun, Ahmed‐Ali, Goumri‐Said, Souraya, Kanoun, Mohammed Benali
• Format: Journal Article
• Language: English
• Published: Chichester, UK John Wiley & Sons, Inc 10-06-2021; Hindawi Limited
• Subjects: architecture design; cell efficiency; Configurations; Design; Design optimization; drift‐diffusion equations; Heterojunctions; I‐V characteristics; monolithic two terminals; Perovskites; perovskite‐silicon tandem solar cells; Photovoltaic cells; Production costs; Silicon; Solar cells; Terminals
• ISSN: 0363-907X; 1099-114X
• DOI: 10.1002/er.6542

Summary
A device based on perovskite and silicon tandem solar cells is considered as an interesting route to improve cell efficiency further the limit of single junction by keeping the reasonable cost of production. Here, we assess the device performances of CH3NH3PbI3 perovskite as top sub‐cells in tandem solar cells in association with traditional crystalline silicon heterojunction solar cells of various configurations such as monolithic two terminals, four terminals mechanically stacked, and four‐terminal optically coupled perovskite/Si tandem solar cells. Our simulation findings highlight that the suggested architecture design increases the device performance by optimizing the thickness of perovskite. Furthermore, the optimal doping concentration of perovskite (1018 cm−3) has contributed to achieve high tandem efficiencies of various device configurations.
Our main objective for achieving an optimized architecture of tandem solar cell is to diminish the optical losses of surface incident radiation in addition to enhancing the charge extraction. The perovskite absorbers with optical bandgap of 1.5 eV were used for designing the highest perovskite/Si‐based tandem efficiency potential with perovskite based top and c‐Si heterojunction (HJ) based bottom sub‐cell.