A comprehensive optimization of aluminum concentration in ZnO nanocrystals by novel simple methods

• Published in: Electronic materials letters Vol. 11; no. 6; pp. 931 - 937
• Main Authors: Rouzbahani, Rozita, Majles Ara, Mohammad Hossein, Efafi, Babak, Mousavi, Seyedeh Soraya
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Institute of Metals and Materials 01-11-2015; 대한금속·재료학회
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; Review Paper; 전자/정보통신공학; Al concentration; ZnO; dopant optimization; sol-gel
• ISSN: 1738-8090; 2093-6788
• DOI: 10.1007/s13391-015-5075-0

This study investigated the effect of sol (with respect to zinc acetate) and Al dopant concentrations on ZnO structure. The electrical current of pure ZnO and AZO (ZnO:Al) nanofluids indicated that, with the increase in concentration of sol and Al dopant up to 1 molar and 2 at. %, carrier concentration increased continuously, and then after that, it decreased. The lattice stress and crystal size of powders showed that Al
+3
ions were better replaced in ZnO structure with 1 molar concentration at 2 at.% Al. Also, a new second phase (ZnAl
2
O
4
) was observed in AZO powder at 2.5 at.% Al by X-ray Diffraction (XRD) and Fourier Transform Infrared (FTIR) analyses. The blue shift in the optical band gap of sols could be explained by the Burstein-Moss effect and Brus equation. It was concluded that there were more Al
+3
ions in the structure of ZnO in AZO powder with 1 molar concentration at 2 at. % Al dopant.