Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon
The ion-bombardment-induced reversible movement of a planar amorphous/crystalline interface in silicon has been studied between 100 and 400 °C. The temperature dependence of the ion dose rate at which there is zero interface movement has an activation energy of 1.2 eV, the dissociation energy of div...
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| Published in: | Journal of materials research Vol. 3; no. 6; pp. 1208 - 1211 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
New York, USA
Cambridge University Press
01-12-1988
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| Online Access: | Get full text |
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| Summary: | The ion-bombardment-induced reversible movement of a planar amorphous/crystalline interface in silicon has been studied between 100 and 400 °C. The temperature dependence of the ion dose rate at which there is zero interface movement has an activation energy of 1.2 eV, the dissociation energy of divacancies. Scaling of this dose rate for different ion species exhibits a quadratic dependence on the density of displaced atoms in the collision cascade of individual ions, giving further evidence for divacancy control of the interface movement. |
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| Bibliography: | ArticleID:00364 ark:/67375/6GQ-95GNZRD6-2 Permanent address: Swedish Institute of Microelectronics, P.O. Box 1084, S-16421 Kista, Sweden. istex:C4B8C95BB194CD151D743BA6BE35F68CA3EBAB61 PII:S0884291400003642 |
| ISSN: | 0884-2914 2044-5326 |
| DOI: | 10.1557/JMR.1988.1208 |