Nonquasi-Static Charge Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry

• Published in: IEEE transactions on electron devices Vol. 60; no. 7; pp. 2419 - 2422
• Main Authors: Sharan, N., Mahapatra, S.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-07-2013; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Compact modeling; Computational modeling; double-gate (DG) MOSFET; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Integrated circuit modeling; Logic gates; Mathematical model; MOSFET; nonquasi-static (NQS) effect; Semiconductor device modeling; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Theoretical study. Circuits analysis and design; Transistors; MOSFET; Circuit design; Circuit simulation; Common grid configuration; Oxide layer; Transistor gate; Dual gate transistor; Compact design; Modeling; Thickness; nonquasi-static (NQS) effect; Asymmetry; Static model; Compact modeling; Continuity equation; Gate oxide; Computer aided design; Surface potential; double-gate (DG) MOSFET
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2013.2262943

With the unique quasi-linear relationship between the surface potentials along the channel, recently we have proposed a quasi-static terminal charge model for common double-gate MOSFETs, which might have asymmetric gate oxide thickness. In this brief, we extend this concept to develop the nonquasi-static (NQS) charge model for the same by solving the governing continuity equations. The proposed NQS model shows good agreement against TCAD simulations and appears to be useful for efficient circuit simulation.