Influence of rapid thermal annealing on the properties of strained GaInAs quantum well lasers

The influence of rapid thermal annealing on the properties of GaInAs strained quantum well lasers is studied. Photoluminescence performed at 300 and 77 K shows that an optimum is found for annealing at 800°C-10 s. The threshold current density of the laser decreases by a factor of 2 to 3 while its i...

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Bibliographic Details
Published in:	JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP Vol. 32; no. 3A; pp. 1056 - 1059
Main Authors:	MAUREL, P, NAGLE, J, HIRTZ, J. P
Format:	Journal Article
Language:	English
Published:	Tokyo Japanese journal of applied physics 01-03-1993
Subjects:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers; laser diodes Rapid thermal annealing Gallium Indium Arsenides Mixed Molecular beam condensation Epitaxy Photoluminescence Strained quantum well Semiconductor laser
Online Access:	Get full text
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Summary:	The influence of rapid thermal annealing on the properties of GaInAs strained quantum well lasers is studied. Photoluminescence performed at 300 and 77 K shows that an optimum is found for annealing at 800°C-10 s. The threshold current density of the laser decreases by a factor of 2 to 3 while its internal quantum efficiency increases from 30% up to 60%. The origin of the non radiative traps involved in the process is discussed.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.32.1056