Structural transformation caused by crystallization in the Ge-Ga-S(CsCl) glasses

• Published in: Molecular Crystals and Liquid Crystals Vol. 700; no. 1; pp. 34 - 47
• Main Authors: Klym, H., Kozdras, A., Ingram, A., Calvez, L.
• Format: Journal Article
• Language: English
• Published: Philadelphia Taylor & Francis 23-03-2020; Taylor & Francis Ltd
• Subjects: Chalcogenides; Chemical Sciences; Crystallization; Gallium sesquisulfide; Germanium sulfide; Glass; glasses; Loosening; Material chemistry; modification; phase; Positron annihilation; positron trapping; Service life assessment; Spectrum analysis; X-ray diffraction; glasses; phase; crystallization; positron trapping; modification
• ISSN: 1542-1406; 1563-5287; 1527-1943
• DOI: 10.1080/15421406.2020.1732550

X-ray diffraction and calorimetric investigations were performed for 80GeS
2
-20Ga
2
S
3
, 82GeS
2
-18Ga
2
S
3
and 84GeS
2
-16Ga
2
S
3
chalcogenide glasses. It is shown that structure of these glasses is characterized by short range ordering. It is established that Ga
2
S
3
and GeS
2
phases can be crystallized in Ge-Ga-S system. Transformation of voids in crystallized (80GeS
2
-20Ga
2
S
3
)
100-х
(СsCl)
x
, x = 0; 5; 10; 15 chalcogenide glasses was studied by positron annihilation lifetime spectroscopy. The CsCl content in GeS
2
-Ga
2
S
3
glassy matrix changed the defect-related component in positron lifetime spectra and confirmed the structural void agglomeration in comparison with the base glass. A larger amount of CsCl in (80GeS
2
-20Ga
2
S
3
)
85
(СsCl)
15
glass resulted in void fragmentation due to loosening of the structure.