Microscale elastic-strain determination by backscatter Kikuchi diffraction in the scanning electron microscope

• Published in: Applied physics letters Vol. 62; no. 10; pp. 1110 - 1112
• Main Authors: TROOST, K. Z, VAN DER SLUIS, P, GRAVESTEIJN, D. J
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 08-03-1993
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physical properties of thin films, nonelectronic; Physics; Solid surfaces and solid-solid interfaces; Surface energy; thermodynamic properties; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Non metal; Scanning electron microscopy; Semiconductor materials; Binary system; Mechanical properties; Diffraction pattern; Elastic deformation; Experimental study; Solid solution; Thin film; Chemical composition; Measurement method; Measurement accuracy; Heterojunction; Kikuchi method
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.108758

It is shown that backscatter Kikuchi diffraction in the scanning electron microscope can be used for the determination of elastic strain with μm resolution. From the shift of Kikuchi bands in backscatter Kikuchi diffraction patterns of epitaxial Si1−xGex layers on Si(100) the perpendicular elastic strain was determined to be 2.5% for x=0.34 and at 1.0% for x=0.16 with an accuracy of about 0.1%. The values found on a μm scale were in good agreement with high-resolution x-ray diffraction measurements averaging over mm distances.