Non-hysteretic superconducting quantum interference proximity transistor with enhanced responsivity

Non-hysteretic superconducting quantum interference proximity transistor with enhanced responsivity

This Letter presents fabrication and characterization of an optimized superconducting quantum interference proximity transistor. The present device, characterized by reduced tunnel junction area and shortened normal-metal section, demonstrates no hysteresis at low temperatures as we increased the Jo...

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Bibliographic Details
Published in:Applied physics letters Vol. 104; no. 8; p. 82601
Main Authors: Jabdaraghi, R. N., Meschke, M., Pekola, J. P.
Format: Journal Article
Language:English
Published: Melville American Institute of Physics 24-02-2014
Subjects:
Applied physics
COMPARATIVE EVALUATIONS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
HYSTERESIS
INDUCTANCE
INTERFERENCE
MAGNETIC FIELDS
MAGNETIC FLUX
Piercing
SUPERCONDUCTING JUNCTIONS
Superconductivity
TEMPERATURE RANGE 0065-0273 K
TRANSISTORS
TUNNEL EFFECT
Tunnel junctions
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Summary:This Letter presents fabrication and characterization of an optimized superconducting quantum interference proximity transistor. The present device, characterized by reduced tunnel junction area and shortened normal-metal section, demonstrates no hysteresis at low temperatures as we increased the Josephson inductance of the weak link by decreasing its cross section. It has consequently almost an order of magnitude improved magnetic field responsivity as compared to the earlier design. The modulation of both the current and the voltage across the junction have been measured as a function of magnetic flux piercing the superconducting loop.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4866584