Impurities in monosilanes synthesized by different processes

• Published in: Inorganic materials Vol. 46; no. 4; pp. 358 - 363
• Main Authors: Sennikov, P. G., Kotkov, A. P., Adamchik, S. A., Grishnova, N. D., Chuprov, L. A., Ignatov, S. A.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01-04-2010
• Subjects: Carbon dioxide; Chemistry; Chemistry and Materials Science; Chlorides; Chlorosilanes; Ethane; Impurities; Industrial Chemistry/Chemical Engineering; Infrared radiation; Inorganic Chemistry; Materials Science; Methane; Silicon; Silicon Tetrafluoride; SiCl; Light Fraction; Disilane; Heavy Fraction
• ISSN: 0020-1685; 1608-3172
• DOI: 10.1134/S0020168510040072

Using high-resolution IR spectroscopy, we have compared the impurity compositions of monosilane (SiH
4
) fractions enriched in impurities in the process of cryofiltration and low-temperature distillation of monosilanes derived from silicon tetrafluoride (SiF
4
) and trichlorosilane (SiCl
3
H). The results demonstrate that the more volatile impurities present in both monosilanes are methane (CH
4
) and carbon dioxide (CO
2
), whereas the impurities specific to the fluoride-derived monosilane are SiF
4
, SiF
3
H, and SiF
2
H
2
. The less volatile impurities common to both monosilanes are ethane (C
2
H
6
), disiloxane (Si
2
H
6
O), and disilane (Si
2
H
6
); the impurities specific to the fluoride-derived monosilane are tetrafluoroethylene (C
2
F
4
) and monofluorosilane (SiFH
3
); and those specific to the chloride-derived monosilane are hydrogen chloride (HCl) and the chlorosilanes SiClH
3
, SiCl
2
H
2
, and SiCl
3
H.