Terahertz electromodulation spectroscopy of electron transport in GaN

Time-resolved terahertz (THz) electromodulation spectroscopy is applied to investigate the high-frequency transport of electrons in gallium nitride at different doping concentrations and densities of threading dislocations. At THz frequencies, all structures reveal Drude transport. The analysis of t...

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Bibliographic Details
Published in:	Applied physics letters Vol. 106; no. 9
Main Authors:	Engelbrecht, S. G., Arend, T. R., Zhu, T., Kappers, M. J., Kersting, R.
Format:	Journal Article
Language:	English
Published:	Melville American Institute of Physics 02-03-2015
Subjects:	Applied physics CARRIER MOBILITY CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Dislocation density Dislocation mobility DISLOCATIONS EFFECTIVE MASS ELECTRIC CONDUCTIVITY Electron transport ELECTRONS GALLIUM NITRIDES SCATTERING SPECTRAL RESPONSE Spectral sensitivity SPECTROSCOPY Spectrum analysis Terahertz frequencies Threading dislocations TIME RESOLUTION
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Summary:	Time-resolved terahertz (THz) electromodulation spectroscopy is applied to investigate the high-frequency transport of electrons in gallium nitride at different doping concentrations and densities of threading dislocations. At THz frequencies, all structures reveal Drude transport. The analysis of the spectral response provides the fundamental transport properties, such as the electron scattering time and the electrons' conductivity effective mass. We observe the expected impact of ionized-impurity scattering and that scattering at threading dislocations only marginally affects the high-frequency mobility.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.4914326