Effect of precursor stoichiometry on morphology, phase purity, and texture formation of hot filament CVD diamond films grown on Si (100) substrate

• Published in: Journal of materials science. Materials in electronics Vol. 31; no. 11; pp. 8597 - 8606
• Main Authors: Ahmed, Raju, Siddique, Anwar, Saha, Rony, Anderson, Jonathan, Engdahl, Chris, Holtz, Mark, Piner, Edwin
• Format: Journal Article
• Language: English
• Published: New York Springer US 01-06-2020; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemical vapor deposition; Chemistry and Materials Science; Cross-sections; Diamond films; Film thickness; Gas mixtures; Grain size; Materials Science; Methane; Morphology; Optical and Electronic Materials; Polycrystalline diamond; Precursors; Purity; Raman spectroscopy; Silicon substrates; Stoichiometry; Texture
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-020-03395-7

The effect of precursor stoichiometry is reported on morphology, phase purity, and texture formation of polycrystalline diamond films. The diamond films were deposited on 100-mm Si (100) substrates using hot filament chemical vapor deposition at substrate temperature 720–750 °C using a mixture of methane and hydrogen. The gas mixture was varied with methane concentrations 1.5% to 4.5%. Diamond film thickness and average grain size both increase with increasing methane concentration. Diamond quality was checked using surface and cross-section by ultraviolet micro-Raman spectroscopy. The data show consistent diamond properties across the surface of the film and along the cross-section. XRD pole figure analyses of the films show that 3.0% methane results in preferential orientation of diamond in the 〈111〉 direction, whereas films deposited with 4.5% methane showed texture along the 〈220〉 direction in addition to 〈111〉 which was tilted ~ 23° with respect to the surface normal.