An analytical model to calculate the current–voltage characteristics of AlGaN/GaN HEMTs

• Published in: Journal of computational electronics Vol. 21; no. 3; pp. 644 - 653
• Main Authors: Tijent, F. Z., Faqir, M., Voss, P. L., Chouiyakh, H., Essadiqi, El H.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01-06-2022; Springer Nature B.V
• Subjects: Aluminum gallium nitrides; Carrier density; Current carriers; Current voltage characteristics; Electric fields; Electrical Engineering; Electron gas; Electrons; Engineering; Gallium nitrides; High electron mobility transistors; High temperature; Mathematical analysis; Mathematical and Computational Engineering; Mathematical and Computational Physics; Mathematical models; Mechanical Engineering; Optical and Electronic Materials; Semiconductor devices; Theoretical; Transconductance; Wide band gap semiconductors; AlGaN/GaN HEMT; Modeling; 2DEG channel
• ISSN: 1569-8025; 1572-8137
• DOI: 10.1007/s10825-022-01871-3

In this paper, a simple analytical model is presented to determine the sheet carrier density and the current–voltage characteristics of different AlGaN/GaN high-electron-mobility transistors (HEMTs). Analytical models are useful in education, in the initial stages of design, and in quick checks of experimental devices, and can also be used to evaluate emerging simulation software. In this model, the influence of polarization charges, the gate voltage
V
G
, and Al concentration on the carrier density are studied. In addition to the effect of gate voltage and Al concentration on the two-dimensional electron gas (2DEG) density, the model calculates drain current, transconductance, and cutoff frequency. The effects of gate length and low-field mobility on the GaN HEMT characteristics are investigated with this model, verifying the desirability of high electron mobility and short gate length for high-performance devices. Temperature is also included in the model, showing the expected reduction of the GaN HEMT current, transconductance, and cutoff frequency at high temperature.