Physics-based analytic modeling and simulation of gate-induced drain leakage and linearity assessment in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET)

• Published in: Applied physics. A, Materials science & processing Vol. 126; no. 5
• Main Authors: Goel, Anubha, Rewari, Sonam, Verma, Seema, Gupta, R. S.
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01-05-2020; Springer Nature B.V
• Subjects: Accumulation; Applied physics; Boundary conditions; Characterization and Evaluation of Materials; Computer simulation; Condensed Matter Physics; Electric fields; Intermodulation distortion; Leakage current; Linearity; Machines; Manufacturing; Materials science; Mathematical analysis; Mathematical models; Nanotechnology; Optical and Electronic Materials; Physics; Physics and Astronomy; Processes; Silicon films; Surfaces and Interfaces; Temperature effects; Thin Films; MOSFET; Gate leakage; Linearity; Nano-tube
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-020-03520-7

Physics-based analytical model is proposed in this paper which analyzes the effect of temperature, channel length and silicon film radius on gate-induced drain leakages (GIDL) in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET). Formulation and analysis for electric field,
E
z
, surface potential and gate-induced drain leakage current,
I
gidl
have been done with the help of appropriate boundary conditions utilized in solving two-dimensional Poisson’s equation. Also, the effect of variation in temperatures at
T
 = 300 K and 500 K, silicon film channel length (
L
30 nm and 40 nm) and radius of
R
 = 9 nm and
R
 = 10 nm have been studied. The simulated results seem to be in good compliance with the analytical results. To analyze the applicability of DM-JAM-TFET for RFIC applications, linearity of the aforesaid device has been deeply investigated by comparing DM-JAM-TFET with JAM-GAA and DM-JAM-GAA at channel length,
L
 = 20 nm. The linearity metrics namely
g
m1
,
g
m2
,
g
m3
, VIP2, VIP3, IMD3 and IIP3 have been significantly improved in DM-JAM-TFET making it intermodulation distortion resistant.