Investigation on nebulizer spray coated Nd-doped SnS2 thin films for solar cell window layer application

• Published in: Journal of materials science. Materials in electronics Vol. 30; no. 15; pp. 13964 - 13973
• Main Authors: Arulanantham, A. M. S., Valanarasu, S., Rex Rosario, S., Kathalingam, A., Shkir, Mohd, Ganesh, V., Yahia, I. S.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01-08-2019; Springer Nature B.V
• Subjects: Atomic force microscopes; Atomic force microscopy; Carrier density; Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystallites; Dislocation density; Doping; Electromagnetism; Electronic properties; Hall effect; Lattice parameters; Materials Science; Microscopes; Morphology; Neodymium; Optical and Electronic Materials; Optoelectronics; Photovoltaic cells; Scanning electron microscopy; Solar cells; Spray pyrolysis; Surface roughness; Thin films; Tin disulfide; X-ray diffraction
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-019-01743-w

Economic nebulizer spray pyrolysis (NSP) technique has been employed to deposit Neodymium (Nd) doped Tin disulfide (SnS
2
) thin films at 325 °C by varying the doping concentration of Nd (0%, 2%, 4% and 6%). The impact of Nd concentration on crystalline structure, morphology and opto-electronic properties of films were studied using X-ray diffraction (XRD), FT-Raman spectrophotometer, atomic force microscope (AFM), energy-dispersive X-ray spectroscope, scanning electron microscope (SEM), UV–Visible spectrometer and Hall Effect measurements. Structural parameters such as lattice constants, texture orientation factor, micro strain, dislocation density and crystallite size were estimated using XRD data. The SEM and AFM images of films displayed an exceptional morphology. The surface roughness of the films was found to increase with the increase of dopant concentration. Optical analysis done on the films revealed variation in band gap from 2.75 to 2.92 eV as the Nd doping concentration is increased from 2 to 6%. SnS
2
thin film exhibited n-type conductivity as, confirmed from Hall Effect studies. The resistivity and concentration of the carrier in the film were found to be 4.17 × 10
−2
 Ω cm and 4.06 × 10
17
 cm
−3
respectively which were then correlated to the deposition parameters. Furthermore, FTO/
n
-Nd-SnS
2
/
p
-SnS hetero-junction based solar cells were prepared and their current voltage curve in dark condition was obtained.