Strained quantum wells for polarization-independent electrooptic waveguide switches

• Published in: Journal of lightwave technology Vol. 10; no. 12; pp. 1926 - 1930
• Main Authors: Zucker, J.E., Jones, K.L., Chiu, T.H., Tell, B., Brown-Goebeler, K.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-12-1992; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit properties; Communication switching; Electric, optical and optoelectronic circuits; Electronics; Electrooptical waveguides; Exact sciences and technology; Excitons; Indium phosphide; Integrated optoelectronics. Optoelectronic circuits; Optical and optoelectronic circuits; Optical polarization; Optical refraction; Optical waveguides; Switches; Tellurium; Voltage; Quantum well; Gallium Indium Arsenides Mixed; Indium Phosphides; Performance characteristic; Theoretical study; Electrooptical device; Selector switch; Performance
• ISSN: 0733-8724; 1558-2213
• DOI: 10.1109/50.202825

A polarization-independent quantum well waveguide switch is demonstrated. By altering the composition and hence the degree of built-in strain, the bandgap of In/sub 1-x/Ga/sub x/As/InP quantum wells is engineered to produce equal field-induced refractive-index change in TE and TM polarizations. At the same time, the enhanced electrooptic effects characteristic of unstrained quantum wells are maintained, such that the voltage-length product for switching is only 3 V-mm.< >