Symmetrical contours of deep level EL2 in liquid encapsulated Czochralski GaAs

• Published in: Applied physics letters Vol. 43; no. 3; pp. 305 - 307
• Main Authors: HOLMES, D. E, CHEN, R. T, ELLIOTT, K. R, KIRKPATRICK, C. G
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 01-08-1983
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Infrared and raman spectra and scattering; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Physics; Characterization; Semiconductor materials; Infrared absorption; Donor center; Experimental study; Inorganic compound; Deep level
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.94294

We have determined the isoconcentration contours of the deep level EL2 across 3-in.-diam, semi-insulating GaAs crystals grown by the liquid encapsulated Czochralski technique. The contours are essentially fourfold symmetric at the seed end of the crystals. The symmetrical pattern is independent of the melt stoichiometry and the relative direction of crystal and crucible rotation. EL2 distributions in the tail of the same crystals are often of lower symmetry. The results support a native defect model for EL2 in which the formation of the defect is enhanced by stress in the crystal.