Feedback-resistant p-type doped InAs/InP quantum-dash distributed feedback lasers for isolator-free 10 Gb/s transmission at 1.55   μ m

Feedback-resistant p-type doped InAs/InP quantum-dash distributed feedback lasers for isolator-free 10 Gb/s transmission at 1.55   μ m

The tolerance to external optical feedback of p-type doped InAs/InP quantum-dash-based distributed feedback (DFB) lasers is investigated for different values of the Bragg-grating coupling coefficient. We show that p-doping of the active layer not only enhances the differential gain but also results...

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Bibliographic Details
Published in:Applied physics letters Vol. 97; no. 23; pp. 231115 - 231115-3
Main Authors: Zou, Q., Merghem, K., Azouigui, S., Martinez, A., Accard, A., Chimot, N., Lelarge, F., Ramdane, A.
Format: Journal Article
Language:English
Published: American Institute of Physics 06-12-2010
Subjects:
Engineering Sciences
Optics
Photonic
Online Access:Get full text
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Description
Summary:The tolerance to external optical feedback of p-type doped InAs/InP quantum-dash-based distributed feedback (DFB) lasers is investigated for different values of the Bragg-grating coupling coefficient. We show that p-doping of the active layer not only enhances the differential gain but also results in small values of the linewidth enhancement factor, both parameters contributing to an increased tolerance to external optical feedback. A −18 dB onset of coherence collapse is reported for antireflection-coated devices, demonstrating the compatibility of quantum-dash-based DFB lasers with isolator-free operation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3525374