j-MOS transistors fabricated in oxygen-implanted silicon-on-insulator

• Published in: IEEE transactions on electron devices Vol. 33; no. 12; pp. 1953 - 1955
• Main Authors: MacIver, B.A., Jain, K.C.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-12-1986; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Electrical engineering. Electrical power engineering; Electronics; Exact sciences and technology; Power electronics, power supplies; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Design; Silicon on insulator technology; Static switch; Junction field effect transistor; Power electronics; MOS transistor; Constituent; Field effect transistor; Ion implantation; Oxygen Ions
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1986.22852

The j-MOS transistor reported earlier has now been fabricated in silicon-on-insulator (SOI) prepared by oxygen ion implantation. Significant improvements in the drain breakdown voltage and off-state leakage current are attributed to a contoured gate oxide and to the quality of the SOI structure, respectively. The electron mobility in the channel silicon is 910 cm 2 /V . s and the minority-carrier lifetime is 3 µs. We conclude that the j-MOS transistor in SOI shows promise for controlling moderate power loads, particularly in dielectrically isolated power integrated circuit applications.