GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy

• Published in: Journal of crystal growth Vol. 323; no. 1; pp. 387 - 392
• Main Authors: RICHTER, M, ROSSEL, C, FOMPEYRINE, J, WEBB, D. J, TOPURIA, T, GERL, C, SOUSA, M, MARCHIORI, C, CAIMI, D, SIEGWART, H, RICE, P. M
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 15-05-2011
• Subjects: Buffers; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Equations of state, phase equilibria, and phase transitions; Exact sciences and technology; Gallium arsenide; Gallium arsenides; General studies of phase transitions; Germanium; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Nucleation; Other semiconductors; Physics; Silicon; Specific materials; Theory and models of film growth; Wafers; B2. Semiconducting germanium; Gallium arsenides; Nucleation; Cluster tools; Roughness; III-V compound; B2. Semiconducting silicon; B3. MOS capacitors; B2. Semiconducting gallium arsenide; A3. Molecular beam epitaxy; Gate oxide; MOS capacitors; Growth mechanism; Molecular beam epitaxy; Germanium; Heteroepitaxy; Silicon; A1. Roughening; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2010.12.002

For heterogeneous integration of III-V compound materials on 200 mm Si wafers, we present a complete in-situ molecular beam epitaxy (MBE) process from a Ge strain compensating buffer on Si to GaAs heteroepitaxy. The whole growth process, including high-k gate oxide deposition, is performed in a 200 mm MBE cluster tool. Thin (=0.3 [micro]m), temperature-graded Ge buffers are investigated and the influence of the substrate temperature during Ge nucleation and anneals is studied. Using such a buffer, GaAs was grown on 200 mm Si wafers and characterized structurally and electrically using MOS capacitors.