Synapse‐Like Organic Thin Film Memristors

• Published in: Advanced functional materials Vol. 28; no. 22
• Main Authors: Zhong, Ya‐Nan, Wang, Tian, Gao, Xu, Xu, Jian‐Long, Wang, Sui‐Dong
• Format: Journal Article
• Language: English
• Published: Hoboken Wiley Subscription Services, Inc 30-05-2018
• Subjects: analog memory; Computer memory; Current modulation; Electronic devices; Materials science; Memristors; organic thin films; Plastic properties; Synapses; Thin films
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.201800854

Exploring new type of synapse–like electronic devices with fusion of computing and memory is a promising strategy to fundamentally approach to intelligent machines. Herein, organic thin film memristors (OTFMs) are achieved, functioning as electrically programmable and erasable analog memory with continuous and nonvolatile device states. The memristive characteristics of OTFMs stem from the asymmetric electrode configuration and the cumulative charge trapping/detrapping in a polymer electret layer, which enables the state–dependent current modulation analogous to the synaptic weight change in biological synapses. OTFMs are demonstrated to successfully emulate the essential synaptic functions, including the reversible potentiation and depression, and the short‐term plasticity such as the paired‐pulse facilitation and the long‐term plasticity such as the spike–timing dependent plasticity.
Organic thin film memristors are achieved based on asymmetric electrode configuration and cumulative charge trapping/detrapping in a polymer electret layer, which function as electrically editable and preservable analog memory. Organic thin film memristors are demonstrated to be capable of emulating both short‐term and long‐term synaptic plasticity, such as the paired‐pulse facilitation and spike‐timing‐dependent plasticity.