Estimations of Low Temperature Dislocation Mobility in GaN

• Published in: Physica status solidi. A, Applications and materials science Vol. 216; no. 17
• Main Authors: Orlov, Valeri I., Vergeles, Pavel S., Yakimov, Eugene B., Li, Xingji, Yang, Jianqun, Lv, Gang, Dong, Shangli
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01-09-2019
• Subjects: activation energy; Dislocation mobility; GaN; Indentation; Low temperature; Temperature; Temperature dependence
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201900163

The size of dislocation rosettes introduced by indentation in the temperature range from 300 to 773 K are studied. The dislocation velocity and its temperature dependence are estimated. It is shown that the activation energy of dislocation movement at temperatures lower than 773 K does not exceed 1 eV.
The activation energy of dislocation mobility in GaN is estimated from the measurements of traveling distances of dislocations gliding in pyramidal planes in the temperature range from 300 to 773 K. Its value is obtained to be equal to 650 ± 230 meV.