Optical and Photoelectric Properties of GaS Thin Films and GaS/InSe Heterostructure

• Published in: Optics and spectroscopy Vol. 126; no. 5; pp. 458 - 462
• Main Authors: Guseinov, A. G., Salmanov, V. M., Mamedov, R. M., Salmanova, A. A., Akhmedova, F. M.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-05-2019; Springer Nature B.V
• Subjects: Absorption spectra; Atomic force microscopy; Heterojunctions; Heterostructures; Lasers; Microscopy; Optical Devices; Optical properties; Optics; Photoelectric effect; Photoelectricity; Photonics; Physics; Physics and Astronomy; Scanning electron microscopy; Spectroscopy of Condensed States; Thin films; X-ray diffraction
• ISSN: 0030-400X; 1562-6911
• DOI: 10.1134/S0030400X19050102

GaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum.
p
-GaS/
n
-InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current–voltage, optical, photoelectric, and luminescence characteristics of
p
-GaS/
n
-InSe heterojunctions have been experimentally investigated.